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作 者:李成虎[1] 赵玉文[1] 黎雪梅 王福永 王玉亭 阎晓彬 陆炜
出 处:《Journal of Semiconductors》2000年第11期1122-1128,共7页半导体学报(英文版)
摘 要:提出了一种新型 Si/Si1- c Gec太阳电池结构 .对长波波段的响应区域—Si基区 Si1- c Gec梯度区光生少子分布进行了求解 .根据电流连续性原理计算了光谱响应 SR,讨论了电池结构和梯度区最大锗浓度 c对光生电流 JI的影响 .结果表明 :在一定条件下梯度区的引入使得 SR明显提高 ,但 c和梯度区厚度同时增加 ,窄能隙的复合效应显现出来 .电池结构对器件性能的影响更为显著 .当梯度区厚度 L2 远小于基区厚度 L1时 ,复合及电场的抽运使得 SR低于相同厚度 Si基区之值 .A new structure of Si/Si 1-c Ge\- c solar cells is presented and the distribution of photogenerated carries in Si\|based region and Si 1-c Ge\- c gradient region for the long wave radiation is solved.According to the current continuity principle,the Spectra Response (SR) was calculated.The influence of solar cell structure and max concentration in gradient region on the photogenerated current has also been discussed.The results show that under some conditions,the SR can be enhanced evidently by introducing the Si 1-c Ge\- c gradient region,but due to the simultaneous increases of c and the thickness of gradient region,the recombination throught the narrow band begins developing.The influence of the cell structure on device performance becomes more conspicuous.When the thickness of the gradient region is far smaller than that of the base region,the SR is lower than that of the same thickness in the base region of Si solar cells by the recombination and the electric field excluding.
关 键 词:梯度 太阳电池 锗化硅 混晶 光谱响应 短路电流
分 类 号:TM914[电气工程—电力电子与电力传动]
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