调谐外腔半导体激光器输出双稳环的确定  

Determination of hysteresis loops for tunable external cavity semiconductor lasers

作　　者：陈建国[1] 李焱[1] 李大义[1] 陆洋[1] 

机构地区：[1]四川大学光电系,成都610064

出　　处：《激光技术》2000年第5期285-288,共4页Laser Technology

基　　金：国家自然科学基金资助

摘　　要：在考察了外腔半导体激光器 (ECLD)的振荡频率ν与激光二极管 (LD)中载流子密度N(或增益 g)、介质的折射率n以及LD第m个模式的共振频率νm 间的关系之后 ,利用微扰法对LD的N ν曲线上被前人错判为不稳定的两个关键区段重新进行了分析 ,结果表明这两个区段是稳定区段 ,据此 ,可以确定在对ECLD进行调频的过程中其增益介质的N ν曲线上出现的双稳环。Investigations have been made to determine relat ions between the oscillation frequency ν of the ECLD and threshold carrier density N (or gain coefficient g ),refractive index n as well as mode frequency ν m of the diode. Afterwards,the perturbation method has been adopted to check the stability of the state represented by the points on the N ν curve. The results indicate that two segments of vital importance for the formation of the loop,which were formerly misjudged as representing non stabl e states,represent stable state. Therefore,the hysteresis loop on the N ν curve can be accomplished.

关 键 词：外腔半导体激光器 微扰法 双稳环 调谐 

分 类 号：TN248.4[电子电信—物理电子学]