Persistent photoconductivity in neutron irradiated GaN  

作　　者：张明兰 杨瑞霞 刘乃鑫 王晓亮 

机构地区：[1]College of Information Engineering,Hebei University of Technology [2]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences [3]Semiconductor Lighting R & D Center,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第9期32-34,共3页半导体学报（英文版）

基　　金：supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20111317120005);the Key Program for Science and Technology Research of Higher Education Institution of Hebei Province,China(No.ZD2010124);the National Natural Science Foundation of China(No.61076004)

摘　　要：Unintentionally doped GaN films grown by MOCVD were irradiated with neutrons at room temperature. In order to investigate the influence of neutron irradiation on the optical properties of GaN films, persistent pho toconductivity （PPC） and low temperature photoluminescence （PL） measurements were carried out. Pronounced PPC was observed in the samples before and after neutron irradiation without the appearance of a yellow lumi- nescence （YL） band in the PL spectrum, suggesting that the origin of PPC and YL are not related. Moreover, PPC phenomenon was enhanced by neutron irradiation and quenched by the followed annealing process at 900 ℃. The possible origin of PPC is discussed.Unintentionally doped GaN films grown by MOCVD were irradiated with neutrons at room temperature. In order to investigate the influence of neutron irradiation on the optical properties of GaN films, persistent pho toconductivity （PPC） and low temperature photoluminescence （PL） measurements were carried out. Pronounced PPC was observed in the samples before and after neutron irradiation without the appearance of a yellow lumi- nescence （YL） band in the PL spectrum, suggesting that the origin of PPC and YL are not related. Moreover, PPC phenomenon was enhanced by neutron irradiation and quenched by the followed annealing process at 900 ℃. The possible origin of PPC is discussed.

关 键 词：GAN IRRADIATION NEUTRON persistent photoconductivity 

分 类 号：TN304.055[电子电信—物理电子学]