The total ionizing dose effects of non-planar triple-gate transistors  

作　　者：刘诗尧 贺威 曹建民 黄思文 

机构地区：[1]Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology,Shenzhen University

出　　处：《Journal of Semiconductors》2013年第9期49-52,共4页半导体学报（英文版）

基　　金：supported by the National Science Foundation for Young Scholars of China(No.11105092);the Shenzhen Science and Technology Development Funds(Nos.JC201005280565A,JC201005280558A,GJHS20120621142118853)

摘　　要：This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.

关 键 词：SILICON-ON-INSULATOR total ionizing dose effects pseudo-MOS non-planar triple-gate transistors 

分 类 号：TN32[电子电信—物理电子学]