An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process  

作　　者：余庭 罗玲 

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences [2]Xidian University

出　　处：《Journal of Semiconductors》2013年第9期63-66,共4页半导体学报（英文版）

摘　　要：Two types of RF LDMOS devices, specified for application in the driver stage and output stage of a power amplifier, are designed based on a modified CMOS process. By optimizing the layout and process, the output capacitance per unit of gate width is as low as 225 fF/mm. The driver stage and output stage devices achieve an output power of 44 W with a PAE of 82% and 230 W with a PAE of 72.3%, respectively （P3aB compression） at 1 GHz. Both devices are capable of withstanding extremely severe ruggedness tests without any performance degradation. These tests are 3-5 dB overdrive, 10：1 voltage standing wave ratio mismatch load through all phase angles, and 40% drain overvoltage elevation at a working point of P3aB.Two types of RF LDMOS devices, specified for application in the driver stage and output stage of a power amplifier, are designed based on a modified CMOS process. By optimizing the layout and process, the output capacitance per unit of gate width is as low as 225 fF/mm. The driver stage and output stage devices achieve an output power of 44 W with a PAE of 82% and 230 W with a PAE of 72.3%, respectively （P3aB compression） at 1 GHz. Both devices are capable of withstanding extremely severe ruggedness tests without any performance degradation. These tests are 3-5 dB overdrive, 10：1 voltage standing wave ratio mismatch load through all phase angles, and 40% drain overvoltage elevation at a working point of P3aB.

关 键 词：PAE RUGGEDNESS RF LDMOS CMOS output power 

分 类 号：TN386[电子电信—物理电子学]