A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain  

作　　者：邓永辉 谢刚 汪涛 盛况 

机构地区：[1]College of Electrical Engineering,Zhejiang University

出　　处：《Chinese Physics B》2013年第9期559-563,共5页中国物理B（英文版）

基　　金：supported by the Ministry of Education of China (Grant No. 20100101110056);the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468)

摘　　要：In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT （VBJT） with comparable breakdown voltage （3357 V） shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.

关 键 词：4H-SIC lateral bipolar junction transistor （BJT） high current gain high breakdown voltage 

分 类 号：TN322.8[电子电信—物理电子学]