用微电子测试结构研究超薄栅介质的可靠性  

Application of Microelectronic test structure for research of ultra-thin gate dielectric reliability

作　　者：张安康 

出　　处：《电子器件》1991年第4期8-17,共10页Chinese Journal of Electron Devices

摘　　要：本文介绍了几种新颖的微电子测试结构及其应用,诸如栅氧化物可靠性评估、薄介质层击穿以及预示MOS绝缘层的边缘效应.同时讨论了超薄栅介质层的可靠性.The some novel microelectronic test structure and its application is described in this paper, such as the estimation of gate oxide reliability and breakdown of film dielectric layer, as well as presage of Mos insulation layer edge effect. At the same time the aspects of ultra thin gate dielectric reliability isdiscussed.

关 键 词：栅介质 可靠性 微电子测试 VLSI 

分 类 号：TN470.7[电子电信—微电子学与固体电子学]