钛掺杂对纳米CeO_2磨料硅片抛光性能的改善  

Improvement on Polishing Performance for Silicon Wafer of Nano-sized Ceria Abrasives by Tianium-doping

作　　者：傅毛生[1] 李永绣[2] 

机构地区：[1]南昌航空大学,江西南昌330063 [2]南昌大学,江西南昌330047

出　　处：《南昌航空大学学报（自然科学版）》2013年第2期73-78,共6页Journal of Nanchang Hangkong University(Natural Sciences)

基　　金：江西省自然科学基金(20132BAB203017);江西省教育厅科技项目(GJJ13532);南昌航空大学博士启动金项目(EA201002220)

摘　　要：以已二醇/水混合溶液为反应介质并结合正丁醇共沸蒸馏处理前驱体,通过化学共沉淀法制备掺钛的Ce1-x Ti x O2(x=0,0.1,0.2,0.3)粉体,运用X射线衍射仪(XRD)、透射电镜(TEM)、Zeta电位仪等仪器对其物相、外观形貌、表面电位等性质进行了表征,通过测定去除速率和原子力显微镜观察硅片表面的微观形貌来评价钛掺杂对CeO2磨料硅片抛光性能的影响。结果表明,900℃焙烧时所合成的CeO2及其复合氧化物为均一的纳米球状粒子,一次粒子尺寸为40 nm^50nm。纳米Ce0.8Ti0.2O2粉体对硅片的去除速率达到最大值139nm·min-1,是纳米CeO2磨料(67nm·min-1)的2倍,且在1.0μm×1.0μm的范围内微观表面粗糙度R a值达到0.254nm,而Ce0.9Ti0.1O2和Ce0.7Ti0.3O2的去除速率分别为112nm·min-1和89nm·min-1。适量钛掺杂导致纳米CeO2磨料硅片抛光性能显著提高,它与钛掺杂调谐增大纳米CeO2磨料的其负表面电位大小和生成CeTi2O6物相密切相关。Titanium- doped ceria Ce1-xTixO2 （x = 0,0.1, 0.2, 0.3 ） powders were prepared via a co -precipitation method, using ethylene glycol （EG）/water as reaction mixed solvent and with precursor treatment of butanol azeotropic distillation. Moreover, the crystalline phase structure, morphology, zeta potential were characterized by X - ray diffraction（XRD） , Transmission electron micros- copy（TEM） and zeta potential analysis respectively. The polishing performance of the as -synthesized Ti -doped ceria abrasives for Silicon wafer was evaluated by the material removal rate （MRR） and atomic force microscopy （AFM）. The results show that the ceria powder and Ti - doped ceria synthesized at 900℃ possesses nano - sized spheroidal morphology with a diameter of 40 - 50nm. A max- imum MRR value of 139 nm.min-1 was obtained by using Ce0.8 Ti0.2O2 nano - sized abrasives as a polishing powder for silicon wafer, and the surface roughness R. in a 1.0μ m × 1.0μm area were found to be of 0. 254 nm. This MRR value is ca. 2.0 times of thatobtained from by using pure ceria nanoparticles （that is, 67nm . min-1 ）. However, MRR value of Ce0. 9Ti0.1 O2 and Ce0. 7 Ti0.2O2 abra- sives are 112nm .min- 1 and 89nm . min- 1, respectively. The facts indicate that the polishing performance for silicon wafer of nano - sized ceria abrasives is significantly improved by Titanium - doping, which closely related to the increase of the zeta potential of Ti - doped ceria and the formation of CeTi2O6.

关 键 词：共沉淀法 钛掺杂氧化铈 硅晶片抛光 去除速率 

分 类 号：O614.33[理学—无机化学] O614.41[理学—化学]