温度对Mn掺杂ZnO薄膜结构的影响  

Effect of temperature on structural propertie of Mn doped ZnO thin films

作　　者：介琼[1] 李彤[1] 张宇[1] 

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222

出　　处：《天津职业技术师范大学学报》2013年第3期1-3,共3页Journal of Tianjin University of Technology and Education

基　　金：天津市教委项目(20120710;20110711)

摘　　要：采用射频磁控溅射法在不同衬底温度下沉积了一系列ZnO和ZnO:Mn薄膜。结合X射线衍射谱和扫描电子显微镜,分析了不同温度条件下的ZnO和ZnO:Mn薄膜的结构特性。结果显示:ZnO和ZnO:Mn薄膜均呈现出显著的(002)定向生长特征,与ZnO的(002)衍射峰相比,相应条件下生长的ZnO:Mn(002)衍射峰均向小角度偏移,这主要是由于大离子半径的Mn2+替代了Zn2+的结果。同时随着衬底温度的升高,薄膜形貌得到明显改善,晶粒尺寸呈现减小趋势。ZnO and ZnO：Mn thin films were prepared on glass substrates under the different temperatures using RF magnetron sputtering method. X-ray diffraction spectroscopy and Scanning electron microscope are used to analyze the structural characteristics of ZnO and ZnO：Mn thin films. The results show that the ZnO and ZnO：Mn films showed significant （002）orientation. Compared with the ZnO （002）diffraction peak positions, all ZnO： Mn （002） diffraction peaks shift toward the lower diffraction angles. This is mainly due to the replacement of Zn2＋ by Mn2＋ with larger ion radius. At the same time, film morphology is obviously improved and film crystal sizes tend to he larger with the increase of substrate temperature.

关 键 词：ZNO MN X射线衍射谱 稀磁半导体 

分 类 号：O484.1[理学—固体物理]