聚甲基丙烯酸丁酯/聚醚酰亚胺的共混及性能研究  

Blending and Properties Study of Poly(butyl methacrylate)/Polyetherimide

作　　者：何玉汝[1] 戴培邦[1] 卢悦群[1] 许积文[1] 王华[1] 

机构地区：[1]桂林电子科技大学材料科学与工程学院,广西桂林541004

出　　处：《绝缘材料》2013年第4期67-69,共3页Insulating Materials

基　　金：广西信息材料重点实验室资助课题(编号桂科能1210908-11-Z)

摘　　要：将甲基丙烯酸丁酯(BMA)与聚醚酰亚胺(PEI)溶液混合,通过自由基聚合得到聚甲基丙烯酸丁酯/聚醚酰亚胺共混高分子体系(PBMA/PEI);将PBMA/PEI作为有机功能层制备三明治结构的阻变存储器件ITO/(PBMA/PEI)/Ag,对PBMA/PEI进行结构表征,分析其热性能和ITO(/PBMA/PEI)/Ag的阻变性能。结果表明:制备的PBMA/PEI具有良好的耐热性能,其初始分解温度为250℃;制备的阻变存储器件具有较好的阻变存储特性,即较高的电流开关比(106)、较低的跳变电压(1.8 V)、较低的开态电流(约为10-4A)。A poly（butyl methacrylate）（PBMA）/polyetherimide（PEI） blending polymer was synthesized by rad- ical polymerization from butyl methacrylate（BMA） and polyetherimide solution, and a sandwich structure resistive random access memory ITO/（PBMA/PEI）/Ag was prepared using PBMA/PEI as organic function layer. The structure of the PBMA/PEI was characterized and the heat-resistance and resistive switching characteristics of the ITO/（PBMA/PEI）/Ag were studied. The results show that the PBMA/PEI has good heat-resistance, with the initial decomposition temperature of 250 ℃. The resistive random access memory has good resistive switching characteristics, that means higher Ion/Ioff ratio（106）, lower switching threshold voltage （1.8V） and lower on-current （about 10-4A）.

关 键 词：甲基丙烯酸丁酯 聚醚酰亚胺 反应共混 阻变存储性能 

分 类 号：TM215[一般工业技术—材料科学与工程] TQ323.7[电气工程—电工理论与新技术]