金刚石电子材料生长的研究进展  

Progress of Diamond Electronic Materials Growth

作　　者：袁明文[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第9期641-650,680,共11页Semiconductor Technology

摘　　要：简述了金刚石兼具物理的和化学的优良性质,尤其是金刚石的半导体电气性质,即宽带隙、高击穿电场、高载流子迁移率和高热导率,成为固态功率器件最有前途的半导体材料之一。介绍了金刚石基的电子器件及其材料生长的研究进展,分析了金刚石膜的导电机理以及材料生长的新技术。重点介绍了采用包括微波等离子体化学汽相淀积（MPCVD）等方法制备金刚石膜、本征单晶生长、硼掺杂等技术。目前在直径为100~200 mm的硅衬底上,可以淀积均匀的超纳米结晶金刚石（UNCD）膜。此外,对金刚石电子学和光电子学的未来进行了展望。Excellent properties of diamond which combined both physical and chemical features are described. Diamond is seen as one of the most promising semiconductor materials power devices because of its superior physical and electrical properties, such as the wide band gap, high break down electric field, carrier mobility and thermal conductivity. The research process of the diamond based electronic devices and related materials growth are reviewed. The electrical conducting mechanism of diamond films is analyzed. The recent advances in the use of microwave plasma chemical vapor deposition （MPCVD） to grow diamond films, single intrinsic crystal and boron doped diamond are introduced. The focal point of the process, growth highly uniform uhra-nano-crystalline diamond （UNCD） thin films on large area substrates （100 -200 mm diameter） with manufacturing-compatible thickness uniformity is also demonstrated. The future trend of the diamond electronics and optoelectronics is prospected.

关 键 词：材料生长 金刚石膜 化学汽相沉积（CVD） 超纳米结晶金刚石（UNCD） 宽带隙 表征 

分 类 号：TN304.18[电子电信—物理电子学]