DC-HCPCVD法高CH_4流量下纳米金刚石膜的制备及生长特性研究  

Deposition and growth properties of nano-crystalline diamond film in high CH_4 flow by DC-HCPCVD

作　　者：吴春雷[1,2] 黄海亮[1] 郑友进[2] 李明[3] 张军[1] 

机构地区：[1]牡丹江师范学院理学院,黑龙江牡丹江157012 [2]牡丹江师范学院新型碳基功能与超硬材料黑龙江省重点实验室,黑龙江牡丹江157012 [3]牡丹江师范学院工学院,黑龙江牡丹江157012

出　　处：《真空》2013年第5期25-27,共3页Vacuum

基　　金：牡丹江师范学院科研项目(QZ201217;QZ201215);黑龙江省教育厅科研项目(11523064;12521577)

摘　　要：在CH4/H2气氛下,利用直流热阴极PCVD(plasma chemical vapor deposition)设备,在高CH4流量下制备纳米金刚石膜。对制备的样品通过扫描电子显微镜、拉曼光谱仪、X射线衍射仪对其进行表征。结果表明:随着CH4流量的增加,晶粒尺寸明显减小,表面变得更加平滑,但非金刚石相增多,膜的品质下降。同时CH4流量增加,促进了(110)面的生长,当CH4流量达到12 sccm,具有(110)方向的择优取向。In CH4/H2 atmosphere,nano-crystalline diamond films were deposited on single crystal Si（111） by direct current hot cathode plasma chemical vapor deposition（DC-HCPCVD） under high flow of CH4.The samples obtained were analyzed by SEM,Raman spectroscopy and XRD.The results indicate that with the increment of CH4 flow,the grain size obviously decreases and the surface becomes smoother.However,higher CH4 flow will lead to the increase of non-diamond phases and also result in bad quality of the film,while it can promote the growth of crystal plane （110）.When the CH4 flow reaches 12sccm,it will have （110） preferred orientation.

关 键 词：直流热阴极 纳米金刚石膜 CH4流量 

分 类 号：O613.71[理学—无机化学] TQ163[理学—化学]