高能电子照射对金刚石中缺陷电荷状态的影响  

Effect of high-energy electron exposure on the charge states of defects in diamond

作　　者：田玉明[1] 王凯悦[1] 李志宏[2] 朱玉梅[2] 柴跃生[1] 曾雨顺[1] 王强[1] 

机构地区：[1]太原科技大学材料科学与工程学院,太原030024 [2]天津大学材料科学与工程学院,先进结构陶瓷与加工技术教育部重点实验室,天津300072

出　　处：《物理学报》2013年第18期438-442,共5页Acta Physica Sinica

基　　金：太原科技大学博士科研启动项目(批准号:20122044);太原科技大学校级UIT项目(批准号:xj2013065)资助的课题~~

摘　　要：金刚石经电子辐照后会形成大量的点缺陷,而这些缺陷很多都是带有电荷的.提出一种用于研究缺陷电荷状态的新思路,即利用扫描电子显微镜(SEM)的高能电子照射辐照区域,通过比较SEM照射前后的低温光致发光光谱,为缺陷电荷状态的确定提供了一些依据.A great number of point defects are created in diamond by electron irradiation, most of which are charged. In this paper, we come up with an interesting thought to determine the charge states of these defects in diamond. The irradiated regions are exposed by high-energy electrons with a scanning electron microscopy （SEM）, and then are characterized by the low temperature micro- photoluminescence （PL） technology. Some evidences to determine the charge states of defects are obtained by comparing the PL spectra between the cases with and without SEM exposure.

关 键 词：金刚石 点缺陷 电荷状态 

分 类 号：O474[理学—半导体物理]