S波段FBAR滤波器芯片的研制  

Development of FBAR Filter Chip for S Band Application

作　　者：李丽[1] 郑升灵[1] 李丰[1] 李宏军[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《压电与声光》2013年第5期617-619,623,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究发展计划基金资助项目(2009CB320200)

摘　　要：采用完全自主的薄膜体声波谐振器(FBAR)滤波器设计、工艺技术,制备了S波段FBAR滤波器芯片。该FBAR滤波器的电路结构为梯形结构,采用一维Mason模型进行了仿真、优化。在工艺上采用空气隙型结构,突破了高c轴取向AlN压电薄膜淀积、精密空气腔制作等关键工艺技术,制备的4节FBAR滤波器中心频率为2 340MHz,3dB带宽为25MHz,中心插损为3.8dB,矩形系数达2.24∶1,输入、输出阻抗均为50Ω,芯片体积仅为1mm×1mm×0.3mm,该性能与同频率、同带宽的介质滤波器性能进行了对比,体积可缩小几千倍,矩形系数优于介质滤波器。A kind of FBAR filter chip for S band application is developed successfully with fully independent de- sign and process technique . The filter is composed of ladder circuit,it is simulated and optimized using one dimen- sional Mason model. In the technical realization, the device has air gap structure; Both the deposition technology of A1N piezoelectric film with high c-axis oriented and precision air gap are broken through. The fabricated 4 pole FBAR filter has the center frequency of 2 340 MHz, the 3 dB bandwidth of 25 MHz, the insertion loss at center fre- quency of 3.8 dB, the shape factor of 2.24 ： 1 ,and both the input and output impedance of 50 I2. The chip size is only 1 mm×1mm×0.3 mm. The above performance is compared with dielectric filter having the same frequency and bandwidth. The volume of FBAR filter is reduced by several permillage, and the shape factor outgoes the dielec- tric filter obviously.

关 键 词：薄膜体声波谐振器（FBAR）滤波器 一维Mason模型 AlN压电薄膜 空气腔 

分 类 号：TN75[电子电信—电路与系统]