脉冲电沉积法制备掺钴WO_3薄膜  

Preparation of WO_3 Electrochromic Thin Films Doped with Co by Pulsed Electrodeposition

作　　者：贾小东[1] 杜金会[1] 于振瑞[1] 李长安[1] 

机构地区：[1]解放军军事交通学院基础部,天津300161

出　　处：《光电子技术》1999年第4期239-242,共4页Optoelectronic Technology

基　　金：国家自然科学基金

摘　　要：利用脉冲电沉积法制备了掺钴氧化钨电致变色薄膜，并探讨了该方法的机理。利用后续退火处理使之结晶。测定了掺钴和不掺钴ＷＯ_３薄膜的结构特性、电化学特性及透射光谱，并研究了金属钻的掺杂对这些特性的影响。WO_3 electrochromic thin films doped with Co were prepared by pulsed elec trodeposition, and the mechanism of this method was also explored. The film was crystal lized by post-annealing treatment. The structural properties, electrochemical properties and optical transmission of the films were determined, and the influence of the Co dopant on them was studied.

关 键 词：脉冲电沉积 氧化钨薄膜 掺钴 后续退火 

分 类 号：TN304.21[电子电信—物理电子学] TN304.055