InAs/GaAs量子点生长中应力分析  

An Analysis of the Strain in Growth InAs/GaAs Quantum Dots

作　　者：杨园静[1,2] 涂洁磊[2] 李雷[2,3] 姚丽[2,4] 

机构地区：[1]文山学院数理系,云南文山663000 [2]云南师范大学太阳能研究所,云南昆明650092 [3]楚雄师范学院物理与电子科学系,云南楚雄675000 [4]大理学院电子工程及自动化系,云南大理671000

出　　处：《文山学院学报》2013年第3期42-44,48,共4页Journal of Wenshan University

基　　金：云南省科技计划重点项目(2009CC012);楚雄师范学院学术后备人才项目(11YJRC19)

摘　　要：围绕InAs(InGaAs)/GaA叠层量子点电池的制作,本文通过文献研究和对近邻面生长实验研究认为,InAs/GaAs量子点生长形貌和特性受生长环境条件和生长条件影响。其中,客观、不可改变的外延层与衬底晶格常数、生长台面、超晶格结构等环境条件对量子点生长最为重要。这些环境条件通过生长应力,决定了量子点生长中的有序成核、生长、合并,直至出现缺陷的多晶体生长,其作用贯穿整个量子点生长过程。Around InAs（InGaAs）/GaA stacked quantum dot cell production,the paper studies the growth of neighboring surfaces by literature research and experiment and deems that InAs/GaAs quantum dots growing morphology and growth characteristics are affected by growing conditions and environmental conditions.Among them,the objective,immutable epitaxial layer and the substrate lattice constant,growth countertops,and other environmental conditions super-lattice structure of quantum dot growth are most important.Growing environmental conditions determine the order nucleation,growth,consolidation,until the defected polycrystalline grows and quantum dots works throughout the whole growing process.

关 键 词：INAS GaAs量子点 SK模式生长 量子点生长因素 应变作用 量子点叠层电池 

分 类 号：TB383[一般工业技术—材料科学与工程]