芯片引线键合点失效的俄歇电子能谱分析  

Failure analysis of the wire bonding of the chip by auger electron spectroscopy

作　　者：蔺娴[1] 李雨辰[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300222

出　　处：《材料研究与应用》2013年第3期205-207,共3页Materials Research and Application

摘　　要：采用俄歇电子能谱法(AES),对某芯片的正常引线键合点和失效引线键合点进行了分析.实验结果表明:失效引线键合点表面出现了Cl元素,其失效原因是在键合点处形成的氯化物腐蚀键合点,导致键合点失效;溅射20min后,键合点内发生Ni金属的迁移,这也是导致键合点失效的原因之一.The bonding points of both normal wire and failed wire of the chip were analyzed by Auger elec- tron spectroscopy. The results showed that the element of the chlorine was found in the surface of the bonding point of failed wire, resulting in corrosion occured and chloride formed at the bonding point. The another possible reason of the failure was migration of Ni atom after 20 min of sputtering at the bonding point.

关 键 词：AES 深度剖析 芯片 键合点 

分 类 号：TB304[一般工业技术—材料科学与工程]