溅射功率对铜铟镓硒薄膜太阳能电池缓冲层In_xS_y的影响  

Deposition and Property Characterization In_xS_y Buffer Layers in Cu(In,Ga)Se_2 Solar Cells

作　　者：陆静苹[1] 王德苗[1] 金浩[1] 周剑[1] 李远东[1] 

机构地区：[1]浙江大学信息与电子工程学系,杭州310027

出　　处：《真空科学与技术学报》2013年第9期939-942,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金重点项目(60936002)

摘　　要：采用射频磁控溅射技术在玻璃上制备In x S y缓冲层,溅射功率范围从30 W到100 W。通过能量色散X射线光谱仪、扫描电子显微镜和紫外分光光度计分别检测在不同溅射功率条件下制备的In x S y薄膜表面形貌、元素组成和光学特性。结果表明随着功率的增加,In x S y薄膜晶粒尺寸增加,硫元素含量比率增加并趋于平缓,光学禁带宽度先增加后减小。溅射功率为80 W时禁带宽度最大为2.75 eV,适合高效率In x S y/CIGS太阳能电池。The InxSy buffer layers,to be used in fabricating the Cu（In,Ga）Se2（CIGS）solar cells,were deposited by RF magnetron sputtering on soda lime glass substrates. The impacts of the deposition conditions, such as the sputtering power, deposition rate, pressure, and substrate temperature, on the micmstructures and properties of the InxSy buffer lay- ers were evaluated. The In^Sy buffer layers were characterized with X-ray diffraction, energy dispersive spectroscopy, scan- ning electron microscopy, and ultraviolet spectrophotometer. The results show that the sputtering power significantly affects the microstructures, contents, and properties of the buffer layers. For example, as the sputtering power increased, the grain size increased;the stoichiometry of sulfur increased and gradually leveled off; and the optical band-gap varied in an in- crease-decrease mode. Deposited at 80 W, the InxSy buffer layers, with the widest optical band-gap of 2.75 eV, work well for fabrication of high efficient InxSy/CIGS solar cells.

关 键 词：射频磁控溅射 InxSy薄膜 光学禁带宽度 太阳能电池 

分 类 号：O484.4[理学—固体物理]