不同氧化物衬底上高质量GaN薄膜的外延生长  

Epitaxial Growth of High-Quality GaN Films on Various Oxide Substrates

作　　者：李国强[1,2] 管云芳[1,2] 高芳亮[1,2] 

机构地区：[1]华南理工大学材料科学与工程学院发光材料与器件国家重点实验室,广州510640 [2]华南理工大学材料科学与工程学院电子材料科学与工程系,广州510640

出　　处：《半导体技术》2013年第10期721-728,共8页Semiconductor Technology

基　　金：国家安全重大基础研究(国防973)资助项目;国家自然科学基金资助项目(51002052)

摘　　要：通过对比蓝宝石(Al2O3),SiC,Si,ZnO衬底与三种非常规氧化物衬底即LiGaO2,MgAl2O4和LaAlO3衬底上外延生长GaN薄膜的优缺点,指出了在这几种氧化物衬底上生长GaN薄膜所具有的独特优势;针对氧化物衬底上生长GaN薄膜的问题,提出了相应的解决方法,进而明确指出了研究非常规氧化物衬底的重要意义。在此基础上,详细介绍了在三种氧化物衬底上生长高质量GaN薄膜的方法及研究进展,为高晶体质量GaN薄膜的生长及Ⅲ族氮化物半导体器件的应用研究、特别是基于非常规氧化物衬底的研究起到很好的指导意义。The advantages and disadvantages of epitaxial growth of GaN on conventional sapphire, SiC, Si, ZnO substrates and other unconventional oxide substrates, including LiGaO2, MgA12 04 and LaA103 are compared in detail. It is pointed out that these unconventional oxide substrates are irreplaceable for epitaxial growth of GaN due to their unique advantages. The corresponding solutions to the problems faced to epitaxial growth of GaN on these unconventional oxide substrates are also discussed, which lead to recognise the significance for the growth of GaN on unconventional oxide substrates. Furthermore, the methods and research progress in growth of high quality GaN films on those unconventional oxide substrates are also introduced in detail, and it is helpful to guide the growth of high-quality GaN films and the application of III-Nitride semiconductor devices, in particular, on unconventional oxide substrates.

关 键 词：氧化物衬底 LiGaO2 MGAL2O4 LAALO3 GAN薄膜 

分 类 号：TN304.054[电子电信—物理电子学]