半导体材料中激子扩散动力学研究进展  

Research Progress of Excition Diffusion Dynamics in Semiconductor Materials

作　　者：王莉[1] 王庆禄[1] 王志刚[1] 

机构地区：[1]唐山师范学院物理系,河北唐山063000

出　　处：《半导体技术》2013年第10期729-734,共6页Semiconductor Technology

基　　金：河北省教育厅项目(Z20089319);唐山师范学院博士基金项目(07A04)

摘　　要：在半导体量子阱器件中,激子发光占有非常重要的地位。阐述了半导体材料中激子扩散动力学研究进展。首先在介绍半导体量子阱中激子的新奇发光现象——双发光环的基础上,阐明了双环图案形成的物理机制;其次介绍了量子阱中偶极激子扩散的特点与物理机制,总结了静电陷阱和应力陷阱中的激子非线性扩散动力学的理论与实验研究成果,然后对有机物半导体中激子扩散进行了概述;最后展望了半导体量子阱中激子的玻色-爱因斯坦凝聚在大功率、低功耗的光电子器件、超快逻辑器件和量子计算中的应用前景。Excition luminescence plays an important role in semiconductor quantum well devices. Research progress of excition diffusion dynamics in semiconductor materials is illustrated. Firstly, the formation mechanics of double rings is illustrated on the basis of introducing the novel luminescence phenomenon, which is the photoluminescent ring of excitons luminescence in quantum wells. Secondly, the diffusion characteristics and physical mechanics of dipole excitons in quantum wells are introduced and the theoretical and experimental investigations on nonlinear diffusion dynamics of excitons in both electro-static trap and stress trap are summarized. Then, the exciton diffusion in organic semiconductors is generalized. Lastly, the possible application of Bose-Einstein condensation of excitons in semiconductor quantum wells is prospected in high power and low loss photoelectric devices, ultra-fast logic devices and quantum computation.

关 键 词：激子 长程扩散 发光环 陷阱 量子阱器件 

分 类 号：O471[理学—半导体物理]