Novel Operation Mechanism of Capacitorless DRAM Cell Using Impact Ionization and GIDL Effects  

作　　者：Huibin Tao Jianing Hou Zhibiao Shao 

机构地区：[1]Department of Microelectronics, Xi 'an Jiaotong University, West Xianning Rd 28, Shaanxi, China

出　　处：《Computer Technology and Application》2013年第7期351-355,共5页计算机技术与应用（英文版）

摘　　要：A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was proposed. The conventional capacitorless DRAM cell with single charge generating effect is either high speed or low power, while the proposed DG-FinFET （double-gate fin field effect transistor） cell employs the efficient integration of impact ionization and GIDL effects by coupling the front and back gates with optimal body doping profile and proper bias conditions, yielding high speed low power performance. The simulation results demonstrate ideal characteristics in both cell operations and power consumption. Low power consumption is achieved by using GIDL current at 0. luA when the coupling between the front and back gates restrains the impact ionization current in the first phase. The write operation of the cell is within Ins attributed to significant current of the impact ionization effect in the second phase. By shortening second phase, power consumption could be further decreased. The ratio of read ＂1＂ and read ＂0＂ current is more than 9.38E5. Moreover, the cell has great retention characteristics.

关 键 词：DRAM CELL IONIZATION GIDL effects. 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O562.4[自动化与计算机技术—计算机科学与技术]