氘在碳钨共沉积层中的滞留行为研究  

Deuterium retention in carbon-tungsten co-deposition layers prepared by RF magnetron sputtering

作　　者：张文钊[1,2] 唐兴华[1,2] 李嘉庆[1,2] 施立群[1,2] 

机构地区：[1]复旦大学现代物理研究所应用离子束物理教育部重点实验室,上海200433 [2]复旦大学核科学与技术系,上海200433

出　　处：《物理学报》2013年第19期328-333,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10975035);国家磁约束聚变科学计划(批准号:2010GB104002)资助的课题~~

摘　　要：运用射频磁控溅射方法,在氘氩混合气氛中制备了含氘碳钨共沉积薄膜.利用离子束分析方法[卢瑟福背散射(RBS)和弹性反冲(ERD)]对薄膜样品的厚度、成分、氘含量等进行了分析;利用拉曼光谱和扫描电子显微镜(SEM),分别分析了薄膜的结构和表面形态.离子束分析发现,氘原子更易被碳原子俘获位俘获,并且氘含量会随着沉积温度的升高而降低;其他镀膜条件固定的情况下,不同混合气体压强下薄膜样品中的氘浓度在5.0 Pa处有一个峰值;拉曼光谱分析显示,沉积温度从室温升高到725 K时,碳钨共沉积层中的类石墨化成分增加,同时,非晶化的程度也加剧;扫描电子显微镜图像表明,随着温度的升高薄膜表面被腐蚀的痕迹消失,但是由于应力的改变表面出现了多处的凸起.The C-W co-deposition layer prepared by radio frequency magnetron sputtering was investigated to identify the characteristic of the C-W mixed layers in fusion experimental reactors. Layers were characterized by ion beam analysis （IBA）, Raman spectra （RS） and scanning electron microscopy （SEM）. It was found that D atoms in C-W layers are mainly trapped by the trapping site of C atoms, only a few of them are arrested by W atoms or defects. D concentration in the C-W layers deposited at 5.0Pa with a fixed flow rate ratio QD2/QAr = 2.5 was lower than 10% and decreased slightly with increasing temperature. D concentration increased with the gas pressure from zero to 5 Pa and then decreased from 5 Pa to 10 Pa. RS revealed that the crystal structure of the C-W layers became graphite-like with increasing temperature, SEM images showed that the caves disappeared and convex bodies were dotted on the surfaces as the temperature increased.

关 键 词：氘滞留 碳钨共沉积 射频磁控溅射 

分 类 号：TL631.24[核科学技术—核技术及应用]