考虑通孔横向热传输效应的三维集成电路热分析  

Thermal Management of 3D Integrated Circuits Considering Horizontal Heat Transfer Effect

作　　者：张岩[1] 董刚[1] 杨银堂[1] 王宁[1] 

机构地区：[1]西安电子科技大学微电子所,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《计算物理》2013年第5期753-758,共6页Chinese Journal of Computational Physics

基　　金：国家自然科学基金(60606006);陕西省科技统筹创新工程计划(011KTCQ01-19);国防预研基金(9140A23060111)资助项目

摘　　要：考虑横向热传输效应,构造一种包含通孔结构的叠层芯片三维热传输模型.在具体的工艺参数下验证叠层芯片层数、通孔密度、通孔直径和后端线互连层厚度对三维集成电路热传输的影响.结果显示,采用该模型仿真得到的各层芯片温升要低于不考虑横向热传输时所得到的温升,差异最大可达10%以上,并且集成度要求越高,其横向热传输效应的影响越明显.该模型更符合实际情况,能够更准确地分析三维集成电路的各层芯片温度.A three-dimensional analytical heat transfer model for stacked chips is developed, which takes into account horizontal heat transfer effect in three-dimensional integrated circuits （3D ICs） with through silicon via （TSV）. Effects of horizontal heat transfer is analyzed with number of strata, TSV density, TSV diameter and thickness of BEOL layer under specific process and thermal parameters. It indicated that temperature rise simulated by the model is lower compared with result not considering horizontal heat transfer effect. Difference of temperature rise can be above 10%. Effect of horizontal heat transfer on thermal management of 3D ICs is more obvious with increasing of integrated level. The model conforms to actual situation. It is more accurate in analyzing temperatures of stacked chips in 3D ICs.

关 键 词：三维集成电路 热分析 硅通孔 横向热传输 

分 类 号：TN402[电子电信—微电子学与固体电子学]