高功率905nm InGaAs隧道结串联叠层半导体激光器  

High power 905nm InGaAs tunnel junction series stacked semiconductor lasers

作　　者：李辉[1] 曲轶[1] 张剑家[1] 辛德胜[1] 刘国军[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《强激光与粒子束》2013年第10期2517-2520,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(60976044);吉林省科技厅项目(20111810)

摘　　要：设计出了隧道结串联叠层半导体激光器结构,采用分子束外延进行激光器材料的外延生长,材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺,制作成条宽200μm、腔长800μm的半导体激光器。两隧道结激光器在脉冲宽度100ns,重复频率10kHz,30A工作电流下输出功率达到80 W,峰值发射波长为905.6nm,器件的阈值电流为0.8A,水平和垂直方向的发散角分别为7.8°和25°。We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy （MBE）. We fabricated the 200 μm wide, 800 μm cavity length laser diode chips by the process of photo- lithography, etching, ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction de- vice reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8° and 25°, respectively.

关 键 词：高功率 应变量子阱 隧道结 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]