高可靠性标准单元库性能参数的设计研究  

Design of Performance Parameter for the High Reliability Standard Cell Library

作　　者：梁曼[1] 蒋见花[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学与计算机》2013年第10期114-118,共5页Microelectronics & Computer

基　　金：国家科技重大专项(2009ZX02306003;2009ZX02305013)

摘　　要：为了设计高可靠性标准单元库的性能参数,需要对其最基本的单元模块反相器的性能参数进行研究.平衡考虑延时特性、噪声容限和功耗等方面的因素,首先确定反相器晶体管PMOS和NMOS的宽度比,然后根据设计需要确定具体的晶体管尺寸,提出了一套完整的确定反相器最小尺寸的方案.最后搭建一组逻辑电路验证所设计的反相器在延时特性和功耗方面体现出的优势,为深亚微米和纳米级标准单元库参数设计提供一定的依据.In order to design the performance parameter of high reliability standard cell library, it need to research the related performance parameter of inverter which is the basic unit in a standard cell library. Balancing delay characteristics, noise margins and power consumption etc factors, firstly decide the PMOS-to-NMOS ratio of the inverter, then size the specific transistor. So a suit of scheme to size the minimum inverter is presented. Finally building a set of logic circuit according to logic effort, simulation results show that the inverter has the great advantage of performance and power consumption. All of these provide some reference for sizing the cells of the deep sub-micron and nanoscale standard cell library.

关 键 词：反相器 延时特性 噪声容限 功耗 电压传输特性(VTC) 

分 类 号：TN402[电子电信—微电子学与固体电子学]