注入光敏器件与MOS场效应结构比较  

Comparison Between Injection Photodetector and MOS Field Effect Structure

作　　者：何民才[1] 黄启俊[1] 王海军 

机构地区：[1]武汉大学物理系,湖北武汉430072

出　　处：《半导体光电》2000年第6期439-441,445,共4页Semiconductor Optoelectronics

摘　　要：通过理论分析和实验证明了注入光敏器件并不是一种MOS场效应结构 。By theoretical analysis and experiment, it has been proved that injection photodetector is not a MOS field effect structure.The different conclusion and opinions put forward in reference [9] are discussed in detail with our own views.

关 键 词：光探测器 注入光敏器件 MOS场效应结构 

分 类 号：TN364[电子电信—物理电子学]