大功率LED散热技术研究进展  

Development of Cooling Technology for High-power Light Emitting Diode

作　　者：晏建宇[1] 王双喜[1] 刘高山[1] 叶家星[1] 

机构地区：[1]汕头大学工学院,广东汕头515000

出　　处：《照明工程学报》2013年第5期84-89,98,共7页China Illuminating Engineering Journal

基　　金：广东省教育厅人才引进专项资金(2012B1033);汕头大学科研启动基金(NTF12001)

摘　　要：本文介绍了目前大功率LED芯片的主要结构和大功率LED封装基板及散热技术的最新进展。结论是:LTCC陶瓷基板及AlSiC金属陶瓷复合基板是目前大功率LED基板的首选材料;同时,散热效果优异的散热器技术也相继推出,其中双压电冷却喷射技术(dual piezoelectric cooling jet)可能会极大的提高大功率LED散热的效率。In this paper, the main chip structures for high-power LED were described. The development of package substrates and external heat dissipation techniques for high-power LED was introduced. LTCC substrate and A1/SiC substrate with excellent heat conduct performance was the main choice for high-power LED. Meanwhile, some external heat-sink system with excellent heat dissipation capability had been studied. The DPJ technique （dual piezoelectric cooling jet） should efficiently improve the heat dissipation for high power LED.

关 键 词：大功率LED 基板 散热器 

分 类 号：TN312.8[电子电信—物理电子学]