氨热法生长氮化镓体单晶的工艺与设备  

Process and Equipment of Gallium Nitride Single Crystal Grown by Ammonothermal Method

作　　者：周海涛[1] 李东平[1] 何小玲[1] 张昌龙[1] 

机构地区：[1]中国有色桂林矿产地质研究院有限公司广西超硬材料重点实验室,国家特种矿物材料工程技术研究中心,桂林541004

出　　处：《硅酸盐通报》2013年第10期2046-2050,2058,共6页Bulletin of the Chinese Ceramic Society

基　　金：广西自然科学基金重点基金(桂科自0991005Z)

摘　　要：由于大尺寸氮化镓单晶难以获得,只能用异质衬底来制作氮化镓器件,因此现在的氮化镓基器件的性能指标还远低于其理论值。氢化物外延法、高压熔体法、助熔剂法和氨热法等许多方法已经用做生长氮化镓大尺寸单晶。其中,氨热法易于实现尺寸扩大,有批量化生产低成本氮化镓晶片的潜力。目前有两个问题仍有待解决。首先是设备,如何增大高压釜口径为液氨溶液提供可靠的设备;第二个是生长工艺,如何以较低的成本得到大面积,低缺陷密度的氮化镓。本文简单综述了氨热法生长大尺寸氮化镓晶体进展。主要内容是关注氨热法的设备和生长工艺。最后探讨了氨热法合成氮化镓单晶的发展前景。GaN based devices are currently performing far below their theoretical potential because it is not possible to obtain bulk crystals of GaN, a substrate of a different material must be used with GaN- based semiconductors when growing crystals for device production. Many methods such as hydride vapor phase epitaxy （HVPE）, high-pressure solution growth, flux method and ammonothermal method have been researched to grow bulk GaN. Among these methods, the ammonothermal growth of bulk GaN has a potential to provide cost competitive GaN wafers due to its excellent scalability. Currently there are two issues that remain to be addressed. First is equipment, the engineering challenge associated with increasing the autoclave size for ammonia based solutions. Second is growth condition which can obtain large area, low defect density GaN at a low cost. In this paper, research progress of bulk GaN growth by the ammonothermal method w~ reviewed. The main considerations are focused on the equipment and growth condition for ammonothermal growing GaN bulk crystals. Finally,we give the outlook for study of ammonothermal GaN in near future.

关 键 词：氨热法 氮化镓 工艺 设备 

分 类 号：O782[理学—晶体学]