Effect of In_x Ga_(1-x )N “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition  

作　　者：钱卫宁 宿世臣 陈弘 马紫光 朱克宝 何苗 卢平元 王耿 卢太平 杜春花 王巧 吴汶波 张伟伟 

机构地区：[1]Laboratory of Nanophotonic Functional Materials and Devices,Institute of Opto-electronic Materials & Technology,South China Normal University [2]Key Laboratory for Renewable Energy,Chinese Academy of Sciences,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第10期401-405,共5页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101);the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046);the Science & Technology Innovation Program of the Department of Education of Guangdong Province,China (Grant No.2012CXZD0017);the Industry–Academia-Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169);the Science & Technology Innovation Platform of Industry–Academia-Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)

摘　　要：In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.

关 键 词：INGAN reciprocal space map indium incorporation surface morphology 

分 类 号：TG174.4[金属学及工艺—金属表面处理]