Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching  

作　　者：王波 宿世臣 何苗 陈弘 吴汶波 张伟伟 王巧 陈虞龙 高优 张力 朱克宝 雷严 

机构地区：[1]Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Materials and Technology,South China Normal University [2]Key Laboratory for Renewable Energy,Chinese Academy of Sciences,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condense Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第10期445-448,共4页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101);the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046);the Science and Technology Innovation Program of Department of Education of Guangdong Province,China (Grant No.2012CXZD0017);the Industry–Academia Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169);the Science and Technology Innovation Platform of Industry–Academia Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)

摘　　要：We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

关 键 词：GAN light-emitting diode （LED） UNDERCUT 

分 类 号：TN312.8[电子电信—物理电子学] O657.31[理学—分析化学]