Influence of Si doping on the structural and optical properties of InGaN epilayers  

作　　者：卢平元 马紫光 宿世臣 张力 陈弘 贾海强 江洋 钱卫宁 王耿 卢太平 何苗 

机构地区：[1]Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Materials and Technology,South China Normal University [2]Beijing National Laboratory of Condensed Matter,Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第10期449-452,共4页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101);the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046);the Science & Technology Innovation Program of Department of Education of Guangdong Province,China (Grant No.2012CXZD0017);the Industry–Academia Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169);the Science & Technology Innovation Platform of Industry–Academia Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)

摘　　要：Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction （HRXRD）, photolumimescence （PL）, scanning electron microscope （SEM）, and atomic force microscopy （AFM）. It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing tile formation of V-defects, which act as nonradiative recombination centers in the InGaN, and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.

关 键 词：Si doping INGAN V-shaped defect 

分 类 号：TN312.8[电子电信—物理电子学]