Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility  

作　　者：耿超 刘杰 习凯 张战刚 古松 刘天奇 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2013年第10期661-666,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.11179003,10975164,10805062,and 11005134)

摘　　要：The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 2~9Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis （MUFPSA）. In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that （i） with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; （ii） due to the higher ion relative velocity and longer range of ~ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.The influence of the metric of linear energy transfer （LET） on single event upset （SEU）, particularly multiple bit upset （MBU） in a hypothetical 90-nm static random access memory （SRAM） is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 2~9Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis （MUFPSA）. In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that （i） with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; （ii） due to the higher ion relative velocity and longer range of ~ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.

关 键 词：MUFPSA LET MBU ion track structure 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]