基体偏压对高功率脉冲磁控溅射制备类石墨碳膜的影响研究  

Impact of Bias on the Graphite-Like Carbon Films Grown by High Power Impulse Magnetron Sputtering

作　　者：张学谦[1,2] 黄美东[1] 柯培玲 汪爱英 

机构地区：[1]天津师范大学,天津300387 [2]中科院宁波材料技术与工程研究所,宁波315201

出　　处：《真空科学与技术学报》2013年第10期969-974,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(51005226;61078059;51101080);宁波市创新团队(2011B81001)

摘　　要：采用高功率脉冲磁控溅射技术于Si基底表面制备了类石墨碳膜,研究了基体偏压对薄膜沉积速率、微观结构、力学性能及摩擦学性能的影响规律。结果表明:随着基底偏压的增高,GLC薄膜sp2含量呈先减小后增加的趋势,在-100 V时达到最小值;其表面粗糙度逐渐降低;硬度和内应力逐渐增大;在基体偏压为-300 V时薄膜的摩擦性能最好,高sp2含量、高硬度和低表面粗糙度共同决定了GLC薄膜优异的摩擦学性能。The graphite-like carbon （GLC） f＇rims were deposited by high power impulse magnetron sputtering （HPPMS） on Si substrates. The impacts of the synthesis conditions, such as the substrate bias, ion energy and pressure, on the properties of the GLC films were evaluated. The GLC films were characterized with X-ray photoelectron spectroscopy （XPS）, Raman spectroscopy, atomic force microscopy （AFM）, and conventional mechanical probes. The results show that the substrate bias voltage strongly affects the microstructures and mechanical properties. For instance, as the bias increased, the surface became increasingly smooth, accompanied by an increased hardness and internal compressive stress; the sp^2 density changed in a decrease-increase mode,minimized at - 100 V.at - 300 V,the GLC films display excellent tribological performance, possibly because of the increased sp^2 density and surface hardness, and a decreased surface roughness.

关 键 词：高功率脉冲磁控溅射 偏压 类石墨碳膜 微观结构 

分 类 号：TB79[一般工业技术—真空技术]