电子回旋共振等离子体辅助原子层沉积金属铝薄膜的研究  

Growth and Characterization of Al Films by Electron Cyclotron Resonance Plasma-Assisted Atomic Deposition

作　　者：赵桥桥[1] 桑利军[1] 陈强[1] 李兴存[1] 

机构地区：[1]北京印刷学院等离子体物理及材料研究室,北京102600

出　　处：《真空科学与技术学报》2013年第10期975-979,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(No.11175024);北京市自然科学基金项目(No.1112012);NSFC(No.11175024);BNSF(No.1112012);2011BAD24B01;KM 201110015008;KM 201010015005;PHR20110516

摘　　要：介绍了以三甲基铝为前驱体、氢气为还原剂,在微波电子回旋共振等离子体装置中进行了等离子体辅助原子层沉积金属铝薄膜的研究。确定了影响薄膜结构、表面形貌、和性能的因素。其中薄膜的晶体结构采用X射线衍射表征、原子力显微镜表征薄膜的表面形貌、傅里叶红外变换仪研究薄膜的成分组成,而薄膜性能表面电阻用四探针电阻仪进行测量。实验得到电子回旋共振等离子体可以有效辅助原子层沉积技术制备金属铝薄膜,微波功率对铝薄膜性能有一定的影响;薄膜的后退火处理对其性能影响较大,在氢气氛围中退火处理后铝薄膜的表面电阻有显著的降低,接近其体电阻值。The aluminum thin films were synthesized on glass substmte by electron cyclotron resonance plasma-assisted atomic deposition, with tri-methyl-aluminum（ C3HgAl, TMA）and hydrogen as the Al source and reduction agent, respectively. The impacts of the growth conditions, including the microwave power, annealing temperature and time, and hydrogen flow rate, etc, on the micmstmctures and electric properties of the Al films were evaluated. The as-deposited Al films were characterized with X-ray diffraction, Fourier transform infrared（FTIR）spectroscopy, atomic force microscopy （AFM） ,and four-point probe. The results show that the microwave power and annealing strongly affect the properties of the Al films. For example, an annealing in hydrogen atmosphere reduced its sheet resistance nearly close to the intrinsic resistance of pure Al plate.

关 键 词：原子层沉积 微波电子回旋共振 退火 表面电阻 

分 类 号：O539[理学—等离子体物理]