纳米线多型异质结碳化硅室温单电子晶体管研究  

Study of Nanowire Silicon Carbide Polytype Heterostructure Single Electron Transistor at Room Temperature

作　　者：张洪涛[1,2] 詹云峰[1,2] Georg Bastian Uli Lemmer 

机构地区：[1]湖北工业大学电气与电子工程学院通信工程系,武汉430068 [2]湖北工业大学电气与电子工程学院纳米电子技术与微系统实验室,武汉430068 [3]Hochschule-Rhein-Waal [4]Universitat Karlsruhe(TH),Lichttechnisches Institut

出　　处：《固体电子学研究与进展》2013年第5期405-409,共5页Research & Progress of SSE

基　　金：德国Karlsruhe University;Lichttechnisches Institut 2003-2004年度对这项工作的资助

摘　　要：采用碳化硅4H/6H多型纳米线制备单电子晶体管,在室温下观察到库仑阻塞效应和负微分电阻,I-V曲线呈现典型的库仑台阶,其台阶为周期性的,这些周期性小台阶,又呈现非周期的嵌套结构。单根纳米线碳化硅由4H/6H多型交替生长构成,它们嵌合构成竹节状生长,碳化硅多型结构中4H多型晶体构成双势垒,其直径为10~80nm,长度约50nm。而联结4H多型的6H多型晶体部分,长度约20nm,且直径较细(约10~35nm),被认为是库仑孤岛。This paper describes the fabrication of the room temperature single electron tran- sistor（SET） by using the individual nanowires periodical polytype 4H/6H silicon carbide . The Coulomb blockade effect and negative differential resistance are observed at room temperature, and the smooth staircases of source-drain current-voltage occur. And the Coulomb staircases dis- play a nesting structure, in which long staircases contain short staircases. The devices feature a 6H-SiC island （down to^10 nm ） between two 4H-SiC dendrites in nanowire 4H-SiC/6H-SiC. In this heterostructure, the diameter of 4H-SiC ranges from 10~80 nm with length of 50 nm and the diameter of 6H-SiC ranges from 10~ 35 nm with length of 20 nm, which could induce local double barriers into nanowires.

关 键 词：室温单电子晶体管 纳米线 碳化硅 多型异质结构 库仑阻塞效应 

分 类 号：TN304.24[电子电信—物理电子学]