一款超宽带GaAs单片数字移相器  

An Ultra-Wideband GaAs Monolithic Digital Phase Shifter

作　　者：甄建宇[1,2] 陈娜[1] 赵瑞华[2] 王凯[2] 韩玉鹏[2] 

机构地区：[1]电子科技大学物理电子学院,成都610054 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2013年第11期807-811,共5页Semiconductor Technology

摘　　要：分析了单片数字移相器的移相原理，详细介绍了每一个基本移相位的设计方法及结构，基于GaAs赝配高电子迁移率晶体管（PHEMT）工艺技术设计并制作了一款超宽带6bit数字移相器。采用ADSMomentum微波设计环境进行了电路仿真，在中国电子科技集团公司第十三研究所的GaAs工艺线上进行了工艺流片并进行了在片测试。测试结果表明，6bit数控移相器在工作频率为8—12GHz时，主要移相态的均方根相位误差（RMS）值小于2．0°，回波损耗小于一11dB，插入损耗为8．0～9．5dB，插损波动为-0．5～0．8dB，控制电压为-5V／0V。6bit数字移相器的电路尺寸为4．1mm×1．5mm，并行输入控制信号，其有效工作带宽达到了40％。The phase shift principle of the monolithic digital phase shifter was analyzed, and the design method and the structure of each basic phase shift state were introduced. A 6 bit digital phase shifter was designed in GaAs pseudomorphic high electron mobility transistor （PHEMT） technology. Using ADS Momentum microwave design environment, the circuit was simulated. Based on the GaAs technology in the 13＇h Research Institute of CETC, the phase shifter circuit was fabricated and tested. The test results show that the frequency range of the 6 bit digital phase shifter is from 8 GHz to 12 GHz, the root-mean-square （RMS） value of the main phase shift state is less than 2.0~. The return loss is less than - 11 dB, the insertion loss is within the range of 8.0 - 9.5 dB, the insertion loss fluctuations is within the range -0.5 dB to 0.8 dB, the chip size is 4.1 mm×1.5 mm, and the control voltages are -5 V and 0 V. This design achieved 40% relative bandwidth with the control signals input in parallel.

关 键 词：超宽带 砷化镓 单片微波集成电路(MMIC) 数字移相器 均方根误差(RMS) 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN623