HP-LEC法InP单晶生长的引晶、放肩过程研究  

Study on the Progress of Seeding and Shoulder Controlling on HP-LEC InP Single Crystal Growth

作　　者：李玉茹[1] 黄清芳 李晓岚[3] 邵会民[3] 史艳磊 孙聂枫[3] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]厦门钨业股份有限公司,福建厦门361000 [3]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第11期840-844,850,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2011ZX01006-001);国家自然科学基金资助项目(61076004)

摘　　要：摘要：利用自制高压单晶炉内采用高压液封直拉技术（HP—LEC）研究了〈100〉InP晶体生长过程中引晶和放肩阶段的控制等因素对单晶生长的影响。采用平放肩工艺进行了3～4英寸（1英寸=2．54cm）InP单晶的生长。通过多次实验，可重复生长出直径80～110mm、长62～112mm的3～4英寸InP单晶锭。介绍了平放肩工艺技术特点和应用效果。经过统计和分析，认为InP晶体生长中放肩阶段的孪晶产生由多种因素造成，不存在所谓的“临界放肩角”。通过热场调整和工艺控制，可以用较低的提拉速度在较短时间内生长出3～4英寸头部；通过等径控制，可以生长出无孪晶或挛晶较少的高质量InP单晶。The affects of seeding progress and shoulder controlling process in 〈 100 〉 InP single crystal growth were investigated by home-made high-pressure furnace, using the high pressure liquid encapsulated Czochralski technology （HP-LEC）. The diameter of 3 to 4 inch （1 inch equals 2.54 cm） twin-free 〈 100 〉 InP crystals can be grown by the flat-top shoulder process or low cone angle method. After lots of experiments, the 80 mm to 110 mm InP single crystal ingots were achieved at the length of 62 mm to 112 mm repeatedly. Technological characteristics and application results of the flat crystallization process in InP single crystal growing were introduced. With the experiments and analyses on the growth of InP crystal, any shoulder angle can be used to grow twin-free InP single crystals. The large diameter shoulder can be grown quickly at a low growth rate aftrer the thermal field adjustment and the process control. The high quality twin-free crystal or few-twin-contained InP ingots can be grown by diameter control.

关 键 词：直径4英寸 INP单晶 平放肩 孪晶 高压液封直拉技术 

分 类 号：TN304[电子电信—物理电子学]