整流二极管瞬态HTIR测试  

Transient HTIR Test of Rectifier Diode

作　　者：保爱林 傅兴中 徐泓 

机构地区：[1]绍兴旭昌科技企业有限公司,浙江绍兴312000

出　　处：《半导体技术》2013年第11期873-876,共4页Semiconductor Technology

摘　　要：整流器件在高温下的漏电流(HTIR)对其工作中的可靠性有重要影响。目前对整流二极管HTIR的测试只限于稳态测试。由于其测试效率低下,不适于制造过程中的快速筛选。利用电流脉冲对整流二极管的pn结瞬态加热并在其后进行快速测试的方法,进行了瞬态HTIR筛选测试实验。与稳态测试进行了对比,结果表明:当瞬态HTIR测试值作为筛选条件确定后,筛选精度与结温以及导致该结温的瞬态加热条件有关,较高的结温有利于提高筛选精度。The high temperature leakage current （HTIR） has important influence on the reliability of rectifier devices in operation. At present, the conventional test of the HTIR for rectifier diode is limited to steady-state test. It is unfit for the rapid screening in the manufacturing process as a result of low efficiency. The current pulse was applied to the p-n junction of the rectifier diode to heat transiently, and then the leakage current was measured quickly. Using the above method, the transient HTIR screening test was done. Compared with the steady-state test, the transient test results show that the screening accuracy is related to the junction temperature and the heating condition when one of the transient HTIR test values is selected as the screening condition. Higher junction temperature is helpful to improve the screening accuracy.

关 键 词：整流二极管 高温漏电流(HTIR) 筛选 结温 瞬态加热 

分 类 号：TN313.5[电子电信—物理电子学]