空间生长GaAs材料多孔部分的俄歇能谱分析与阴极荧光形貌观察  

Investigation of bubble surface of GaAs grown under microgravity condition by Auger and Cathodoluminescence

作　　者：李韫言[1] 蔚燕华[1] 李成基[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2000年第4期332-334,共3页Journal of Functional Materials and Devices

摘　　要：在空间生长SI GaAs的某些部位有汽泡产生 ,经俄歇分析 ,汽泡表面约有 1 0nm的砷层 ,它从半绝缘砷化镓内部逸出 ,导致其成为半导体。用阴极荧光形貌观测了其多晶结构。The arsenic layer of about 10nm deposited on the bubble surface of GaAs that was grown under microgravity condition has been measured by Auger analysis. The poly crystalline structure have also been observed by SEM cathodoluminescence image.

关 键 词：砷化镓 汽泡 俄歇分析 阴极荧光 

分 类 号：TN304.23[电子电信—物理电子学] TN304.07