GaAs研磨片化学腐蚀均匀性的分析  

Analysis of uniformity in lapped wafers with chemical etching

作　　者：郑红军[1] 卜俊鹏[1] 尹玉华[1] 白玉柯[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2000年第4期335-337,共3页Journal of Functional Materials and Devices

摘　　要：采用不同的化学腐蚀方法 ,探讨了不同体系成份、温度、腐蚀过程的吸放热对晶片均匀性的影响 ,提出了氨水系列 ,进行晶片化学腐蚀 ,晶片厚度均匀性 1 1 .47% ,为下步工艺提供平整度较好的晶片。Influences of composition, heterogenety, temperature, endothermal reaction, exothermal reaction in chemical etchants on the uniformity of the lapped GaAs wafer are investigated. Based on the investigation, ammonia series are proposed to use as the etchant and the wafer uniformity of 1%~1.47% is achieved, and the GaAs wafer with the better flatness can be provided for the next process.

关 键 词：研磨片 化学腐蚀方法 晶片均匀性 

分 类 号：TN304.23[电子电信—物理电子学]