Ge_xSi_(1-x)/Si中应变的会聚束电子衍射研究  

Study of the strain in Ge_xSi_(1-x)/Si by convergent beam electron diffraction

作　　者：范缇文[1] 吴巨[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所材料开放实验室,北京100083

出　　处：《功能材料与器件学报》2000年第4期403-405,共3页Journal of Functional Materials and Devices

摘　　要：介绍了会聚束电子衍射 (CBED)技术与计算机模拟相结合测定GexSi1-x Si化学梯度层中应变分布的实验结果 ,提供了一种高空间分辨率、高灵敏度 ,且适用于任何材料系中微区晶格常数测定及应变分布研究的技术途径。Convergent beam electron diffraction (CBED), combined by computer simulation, has been to be a powerful tool for the strain study, due to its high spatial resolution and high sensitivity. The local lattice parameters and the strain in the graded Ge x Si 1-x grown on Si buffer by molecular beam epitaxy(MBE) have been determined by the technique. The results indicate that lattice parameters and the strain in graded Ge x Si 1-x increase while Ge content, x value, increase from 0.05 to 0.35.The lattice of the whole graded layer is tetra-symmetry basically although some slight deformations have been observed from CBED) pattern around the interface between graded GeSi and the Si buffer.There are thread dislocations with density as high as 10 7 /cm 2 in the middle area of the graded layer, but fewer exist in the top, which is attributed to the distribution and relaxation of the strain in the material system.

关 键 词：会聚束电子衍射 计算机模拟 应变 GESI/SI 

分 类 号：TN304.12[电子电信—物理电子学] O722.7[理学—晶体学]