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作 者:吴杰[1] 方健[1] 杨毓俊[1] 陶垠波[1] 臧凯旋[1]
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054
出 处:《微电子学》2013年第4期460-463,共4页Microelectronics
摘 要:基于普通带隙基准原理,设计了一种简单的3阶补偿带隙基准电路。这种补偿方式无需改变普通带隙基准的结构,仅增加很少的器件就能实现3阶补偿,具有电路实现简单、功耗低、容易嵌入传统带隙基准等优点。设计采用0.5μm BiCMOS工艺,仿真结果表明,在-40℃~120℃温度范围内,5V工作电压下,该带隙基准源的输出电压为1.204V,温度系数为1.9×10-6 V/℃,在1kHz时,电源抑制比为58dB。Based on the conventional theory of bandgap reference, a simple bandgap reference source with 3ra- order compensation was designed. With this method, no change should be made on the structure of the conventional bandgap reference, and only a few additional elements were required to achieve 3ra-order compensation. The proposed bandgap circuit featured simple implementation and low power consumption, and it could be easily embedded into the conventional handgap reference source The circuit was designed based on 0. 5/an BiCMOS process Simulation results indicated that the bandgap reference had an output voltage of 1. 204 V at 5 V supply, a temperature coefficient of 1.9)〈10-6V/℃ in the temperature range from -40 ℃ to 120 ℃, and a PSRR of 58 dB at 1 kHa
分 类 号:TN433[电子电信—微电子学与固体电子学]
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