Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices  

作　　者：王国伟 向伟 徐应强 张亮 彭振宇 吕衍秋 司俊杰 王娟 邢军亮 任正伟 牛智川 

机构地区：[1]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences [2]Luoyang Optical Electronics Development Center

出　　处：《Journal of Semiconductors》2013年第11期74-78,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.U1037602,61274013,61290303);the National Basic Research Program of China(Nos.2010CB327602,2012CB932701,2013CB932904)

摘　　要：We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.

关 键 词：SUPERLATTICES GASB focal plane array infrared detector 

分 类 号：TN36[电子电信—物理电子学]