The fabrication of vibration energy harvester arrays based on AlN piezoelectric film  

作　　者：尚正国 李东玲 温志渝 赵兴强 

机构地区：[1]Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology, Chongqing University [2]National Center for International Research of Micro/Nano-System and New Material Technology, Chongqing University [3]Microsystem Research Center of Chongqing University

出　　处：《Journal of Semiconductors》2013年第11期79-82,共4页半导体学报（英文版）

基　　金：supported by the Doctoral Fund of Ministry of Education of China(No.708072)

摘　　要：： The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride （AlN） film are presented. The structure design and fabrication process of the device are introduced. The key material, the AIN film with crystal orientation （002）, was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction （XRD）. The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g （g is standard gravity acceleration） is applied. Key words： A1N; crystal orientation; harvester arrays; vibration energyThe fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride （AlN） film are presented. The structure design and fabrication process of the device are introduced. The key material, the AIN film with crystal orientation （002）, was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction （XRD）. The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g （g is standard gravity acceleration） is applied. Key words： A1N; crystal orientation; harvester arrays; vibration energy

关 键 词：ALN crystal orientation harvester arrays vibration energy 

分 类 号：TN304.055[电子电信—物理电子学]