采用CVD异位退火和双温区HPCVD工艺制备MgB_2/B/MgB_2多层膜  

PREPARATION OF MgB_2/B/MgB_2 TRILAYERS BY CHEMICAL VAPOR DEPOSITED EX SITU AND HYBRID PHYSICS-CHEMISTRY VAPOUR DEPOSITED IN A TWO-ZONE SYSTEM

作　　者：周章渝[1,2] 王松[1,2] 杨发顺[1,2] 杨健[1,2] 傅兴华[1,2] 

机构地区：[1]贵州大学电子信息学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵州贵阳550025

出　　处：《低温物理学报》2013年第6期425-429,共5页Low Temperature Physical Letters

基　　金：贵州省科学技术基金[批准号:20092058;20112008);贵州大学自然科学青年科研基金(批准号:2009014)资助的课题~~

摘　　要：介绍了采用了MgB2薄膜的化学气相沉积(CVD)异位退火和双温区混合物理化学气相沉积(HPCVD)制备技术,并以B膜作为势垒层在多晶的Al2O3基底上制作了三明治结构的MgB2/B/MgB2多层膜.采用扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法对制备的MgB2/B/MgB2多层膜的断面结构、超导薄膜晶体结构及超导特性进行了测量研究.结果表明,制备的MgB2/B/MgB2多层膜结构清晰,底层和顶层超导薄膜显示出良好的超导特性.The sandwich-type MgB2/B/MgB2 trilayers were fabricated on polycrystalline A12 03 substrate, which the top and bottom MgB2 layers were grown by chemical vapor deposited（CVD） ex situ and hybrid physics-chemis- try vapour deposited（HPCVD） in a two-zone system, the B barrier were prepared by CVI）. Scanning electron mi- croscopy, X-ray diffraction and four-point probe method were carried out to study cross-sectional structure, super- conducting properties and crystal structure of MgB2/B/MgB2 trilayers. The results addressed the MgB2/B/MgB2 trilayers have a good structural and superconducting properties using the trilayer deposition process.

关 键 词：MgB2/B/MgB2多层膜 化学气相沉积(CVD) 混合物理化学气相沉积 (HPCVD) 

分 类 号：TN304.055[电子电信—物理电子学]