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作 者:秦玉磊[1] 王晖[2] 熊杰[1] 赵晓辉[1] 夏钰东[1] 李丽华[1] 陶伯万[1]
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]中国科学院电工研究所超导与新材料应用研究实验室,北京100190
出 处:《低温物理学报》2013年第6期444-448,共5页Low Temperature Physical Letters
摘 要:采用直流磁控溅射方法在石英衬底上沉积Nb薄膜,通过四探针电阻测试仪、X射线衍射(XRD)、原子力显微镜(AFM)等测试分析,研究不同衬底温度对Nb薄膜的晶体结构、应力情况、表面形貌和电性能的影响.所制备的Nb薄膜在(110)晶面方向存在明显的择优取向,提高沉积温度可以使结晶质量变好,缓解铌膜内部应力,表面更加致密平整;合适的沉积温度有利于铌膜电阻率的减小,在400℃附近制备的Nb膜电阻率最小(约为18.5μΩ-cm),其临界转变温度(Tc)为9.1K,表明具有良好的超导特性.In this paper, niobium films were fabricated on quartz substrates by direct-current (DC)magnetron sputtering. The influence of deposition temperature on the resistivity, crystal structure, interior stress and surface morphology of Nb films were systematically studied using four-point probe method , X-ray diffraction(XRD) and atomic force microscopy (AFM), respectively. Deposition temperature had a strong effect on the resistivity and microstructure of the Nb films. The XRD results indicated that Nb films were body centered cubic structure with a preferred orientation of (110). The stress in the Nb films decreased with the increase of the deposition temperature The AFM images showed that the surface roughness and grain size of the niobium film increased with the deposition temperature increasing. The resistivity of Nb film reduced with the increasing deposition temperature and reached a minimum of 18. 5μΩcm when the deposition temperature was 400℃, with superconducting transition temperature of approximated 9. 1K.
关 键 词:直流磁控溅射 Nb膜 临界转变温度(Tc) 内部应力 表面形貌
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