SnO_2纳米结构的制备及发光特性  

Preparation and Luminescence Properties of SnO_2 Nanostructures

作　　者：王宇[1] 李玉国[1] 方香[1] 刘永峰[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《微纳电子技术》2013年第11期705-709,共5页Micronanoelectronic Technology

摘　　要：以Sn为源,在恒温1 000℃条件下,利用碳热蒸发方式,选取不同的退火时间,在溅射Au膜的Si衬底上生长出不同形貌的SnO2纳米结构。采用扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)对纳米结构进行表征,结果表明,Si衬底上生长的是具有金红石结构的SnO2纳米结构,此外用光致发光(PL)对样品进行测试,研究其发光特性,发现397 nm的发光峰是由结构缺陷或者发光中心如纳米晶粒和缺陷造成的,585 nm的发光峰是氧空位缺陷引起的。在此基础上对SnO2纳米结构的生长机制进行分析,发现其遵从VLS生长机制。在恒温条件下,退火时间对SnO2纳米结构的形貌有重要影响,因此可以通过选择不同的退火时间实现SnO2纳米结构的可控生长,得到性能良好的纳米结构。With Sn as the source, under the condition of constant temperature of 1 000 ℃, by using the method of carbon thermal evaporation and selecting dif-ferent annealing time, the dif- ferent morphologies of SnO2 nanostructures were grown on the Si substrate which was sputtered by the Au film. The nanostructures were characterized by using scanning electron microscope （SEM）, transmission electron microscope （TEM） and X-ray diffraction （XRD）. The result shows that the SnO2 nanostructures with rutile structures grow on the Si substrate. Its lumines- cence property was researched by using photoluminescence （PL）. The peak of 397 nm is caused by structural defects or luminescent centers such as nanocrystals or defects, and the peak of 585 nm is caused by oxygen vacancies. Above all, the growth mechanisms of the SnO2 nanostruc- tures to comply with the VLS growth mechanism was obtained through the analysis. The annea- ling time has important influence to the morphologies of SnO2 nanostructures under the condition of constant temperature. The controlled growth of the SnO2 nanostructures was achieved by se- lecting different annealing time, and the nanostructures with good performance were got.

关 键 词：碳热蒸发 SnO2纳米结构 发光特性 气-液-固(VLS)生长机制 可控生长 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]