硼掺杂浓度对金刚石薄膜电极的影响  

Influences of the Boron Doping Concentration on the Diamond Film Electrode

作　　者：郭倩[1] 檀柏梅[1] 高宝红[1] 甄加丽 赵云鹤[1] 

机构地区：[1]河北工业大学微电子技术研究所,天津300130

出　　处：《微纳电子技术》2013年第11期731-734,共4页Micronanoelectronic Technology

基　　金：国家中长期发展规划重大科技专项资助项目(2009ZX02308);河北省自然科学基金资助项目(E2013202247);河北省教育厅基金资助项目(2011128)

摘　　要：金刚石由于其独特的物理和化学性质,使其成为电极材料的首选。通过热丝化学气相沉积(HFCVD)技术,在钽片上制备了p型掺硼金刚石(BDD)薄膜电极。通过掺入硼元素在金刚石带隙间引入杂质能级,改变了电极的电学特性,同时硼替位碳原子改变了金刚石的结构。通过原子力显微镜(AFM)和循环伏安法(CV)分析讨论了硼掺杂浓度对BDD电极的表面形貌和电化学特性的影响。结果表明,优化硼掺杂浓度可以使薄膜有好的致密性和稳定的电化学性质。硼掺杂浓度优化后制备的BDD电极电化学窗口可达3.8 V。Diamond is regarded to be the preferred electrode material for its excellent physical and chemical properties. The p-type boron-doped diamond （BDD） thin film electrode was prepared on the tantalum substrate by the hot filament chemical vapor deposition （HFCVD） technique. Through boron doping, the impurity levels can be produced between the diamond band gap, and the electrical properties of the electrodes are changed. Meanwhile, boron substituting carbon atom can change the structure of diamond. The effects of the boron doping concentration on the surface topographies and electrochemical properties of the BDD electrode were studied by the atomic force microscopy （AFM） and the cyclic voltammetry （CV）. The results show that the op- timization of the boron doping concentration can improve the film density and stability of the elec- trochemical properties. After the optimization of the boron doping concentration, the electro- chemical window of the BDD electrode can be up to 3.8 V.

关 键 词：掺硼金刚石(BDD)薄膜电极 电化学窗口 热丝化学气相沉积(HFCVD) 循环伏安法(CV) 硼掺杂 

分 类 号：TB43[一般工业技术]