ZnO基稀磁半导体的第一性原理研究进展  

Study Progress of First Principle for ZnO Based Diluted Magnetic Semiconductors

作　　者：吴瑞强[1] 马勇[1] 张楠[1] 

机构地区：[1]重庆市光电功能材料重点实验室,重庆师范大学光学工程重点实验室,重庆401331

出　　处：《中国西部科技》2013年第11期41-42,51,共3页Science and Technology of West China

摘　　要：综述了ZnO基稀磁半导体的应用意义及其近些年以来的研究进展。从晶体结构、材料的第一性原理研究现状和待解决的问题几个方面阐述了以ZnO基稀磁半导体的基本特点,并展望了今后的研究重点及发展方向。The application significance and research progress on ZnO based diluted magnetic semiconductors was summarized.The basic characteristics of the ZnO Based Diluted Magnetic Semiconductors were reviewed in detail from various aspects,including its crystal structure,first principle research status,and problems to be solved.The future research focus and development direction of diluted magnetic semiconductors were also discussed and prospected.

关 键 词：第一性原理 ZNO 稀磁半导体 居里温度 研究进展 

分 类 号：TN304.7[电子电信—物理电子学]