多色量子阱红外探测器的发展(下)  

Development of Multicolor Quantum Well Infrared Photodetectors(Ⅱ)

作　　者：王忆锋[1] 谈骥[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外》2013年第11期18-25,共8页Infrared

摘　　要：军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质结构中的载流子束缚效应。GaAs/AlGaAs/QWIP的主要优点包括标准的Ⅲ-Ⅴ族衬底材料和技术、良好的热稳定性、大面积、低研发成本以及抗辐射性。QWIP的另一个重要优点是具有带隙工程能力。可以通过调节量子阱宽度和势垒组分设计出满足特殊要求(例如多色焦平面列阵应用)的器件结构。介绍了对QWIP探测物理机制的理解以及近年来多色QWIP技术的发展状况。Military infrared detectors need large format, highly uniform and multicolor focal plane arrays operating in various infrared regions. A candidate which can meet this need is the Quantum Well Infrared Photodetectors（QWIP）. As a new generation of infrared detectors, the QWIPs are based on the carrier confinement in ultrathin semiconductor heterostructures. The main advantages of GaAs/A1GaAs/QWIPs include standard III-V substrate material and technology, excellent thermal stability, uniformity, large area, low development cost and radiation hardness. Another important advantage of QWIPs is their band-gap engineering ability. By adjusting quantum well width and barrier composition, the device structure which meets the special requirements in multicolor focal plane array applications can be designed. The understanding of the physics of QWIP detection and the development status of multicolor QWIP technology in recent years are presented.

关 键 词：量子阱 多色 红外探测器 焦平面列阵 

分 类 号：TN215[电子电信—物理电子学]